PART |
Description |
Maker |
IRFZ44EL IRFZ44ES |
MOV 250V RMS 17MM HIGH ENERGY 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.023ohm,身份证\u003d 48A条) (IRFZ44ES / IRFZ44L) Power MOSFET Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
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International Rectifier, Corp. IRF[International Rectifier]
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SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor 120 V, 100 A high energy NPN transistor 100 V, 100 A high energy NPN transistor 140 V, 100 A high energy NPN transistor 160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
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2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
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BUV94 BUV95 BDY46 |
RDS/RBDS processor Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:660Vrms; Voltage Rating DC, Vdc:850VDC; Peak Surge Current (8/20uS), Itm:6500A; Clamping Voltage 8/20us Max :1650V; Peak Energy (10/1000uS):250J; Capacitance, Cd:400pF
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JE93I9HTR5 JE9 JE9112HR1 JE9112HR2 JE9112HR3 JE911 |
Digital Media System-on-Chip (DMSoC) 338-NFBGA 大功率磁保持继电 2.0mV Quad Ultra Micropower Rail-to-Rail CMOS Operational Amplifier, 24L SOIC 大功率磁保持继电 HIGH POWER LATCHING RELAY 大功率磁保持继电 Energy Harvesting Module w/ connector, 1.8V to 3.6V, 4.6mJ, 68msec@25mA Energy Harvesting Module w/ connector, 3.1V to 5.2V, 55mJ, 88msec@150mA Energy Harvesting Module w/ connector, 3.1V to 5.2V, 8.3mJ, 80msec@25mA Energy Harvesting Module w/ connector, 1.8V to 3.6V, 30mJ, 75msec@150mA SOIC socket added to Adapter Module
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Hongfa Relay ???瀹???靛0?′唤?????? Xiamen Hongfa Electroacoustic Co., Ltd. 厦门宏发电声股份有限公司 HONGFA[Hongfa Technology]
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2N4361 2N4361-2N4371 2N4362 2N4363 2N4365 2N4366 2 |
Phase Control SCR 70 Amoeres Average(110 RMS) 1400 Volts 相位控制晶闸0 Amoeres平均10 RMS)的1400伏特
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Powerex, Inc. POWEREX[Powerex Power Semiconductors]
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ADUM130E0BRWZ-RL ADUM130E1BRWZ ADUM130E1BRZ ADUM13 |
3.0 kV RMS/3.75 kV RMS Triple-Channel Digital Isolators
|
Analog Devices
|
BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 TRIAC|700V V(DRM)|10A I(T)RMS|TO-220 Transient Voltage Suppressor Diodes 可控硅| 600V的五(DRM)的| 10A条口(T)的有效值|20
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Volex PLC
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EM4-DINAV53 EM4-DINAV13ADR EM4-DINAV13AOR EM4-DINA |
Energy Management Energy Meter with plug-in Output Modules 能源管理电能表与插件输出模块
|
Electronic Theatre Controls, Inc.
|
SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五(DRM)的| 50A条口(T)的有效值|08VARM8 TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
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MJL21193 MJL21193-D MJL21194 |
Power 16A 250V NPN Silicon Power Transistors From old datasheet system TRANSISTOR,BJT,PNP,250V V(BR)CEO,160A I(C),TO-264 Power 16A 250V PNP
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ON Semiconductor
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